IndiumV3, Main, Repository, bibRecord, 000074

Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

Identifieur interne : 000074 ( Main/Repository ); précédent : 000073; suivant : 000075

Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

Auteurs : RBID : Pascal:14-0018941

Descripteurs français

Pascal (Inist)
- Lithographie nanoimpression, Synthèse nanomatériau, Aire sélective, Croissance sélective, Phosphure d'indium, Composé III-V, Réseau(arrangement), Réaction dirigée, Semiconducteur III-V, Or, Silicium, Lithographie UV, Méthode MOCVD, Mécanisme croissance, Monocristal, Propriété chimique, Propriété optique, Substrat semiconducteur, Nanostructure, InP, Substrat silicium, 8116N, 8116, 8115G, 8110A, Nanofabrication.
Wicri :
- concept : Or.

English descriptors

KwdEn :
- Arrays, Chemical properties, Gold, Growth mechanism, III-V compound, III-V semiconductors, Indium phosphide, MOCVD, Monocrystals, Nanofabrication, Nanoimprint lithography, Nanomaterial synthesis, Nanostructures, Optical properties, Selective area, Selective growth, Semiconductor substrate, Silicon, Template reaction, Ultraviolet lithography.

Abstract

Selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars was demonstrated on an array of template segments composed of a stack of gold and amorphous silicon. The template segments were patterned by UV nanoimprint lithography on a silicon substrate covered with a natural oxide, and the SAG was achieved by metal organic chemical vapor deposition. Our SAG is different from conventional SAG in one critical aspect. In our SAG, growth of InP takes place selectively on a pre-defined array of template segments made of non-single crystal materials on a foreign substrate. The grown InP nanopillars were studied for their structural, chemical and optical properties. The new SAG process is not limited to the specific materials such as InP nanopillars and silicon substrate used in this demonstration; our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates.

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Pascal:14-0018941

Le document en format XML

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<author><name sortKey="Kobayashi, Nobuhiko P" uniqKey="Kobayashi N">Nobuhiko P. Kobayashi</name>
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<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>MOCVD</term>
<term>Monocrystals</term>
<term>Nanofabrication</term>
<term>Nanoimprint lithography</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructures</term>
<term>Optical properties</term>
<term>Selective area</term>
<term>Selective growth</term>
<term>Semiconductor substrate</term>
<term>Silicon</term>
<term>Template reaction</term>
<term>Ultraviolet lithography</term>
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<term>Synthèse nanomatériau</term>
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<term>Propriété optique</term>
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<term>Substrat silicium</term>
<term>8116N</term>
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<front><div type="abstract" xml:lang="en">Selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars was demonstrated on an array of template segments composed of a stack of gold and amorphous silicon. The template segments were patterned by UV nanoimprint lithography on a silicon substrate covered with a natural oxide, and the SAG was achieved by metal organic chemical vapor deposition. Our SAG is different from conventional SAG in one critical aspect. In our SAG, growth of InP takes place selectively on a pre-defined array of template segments made of non-single crystal materials on a foreign substrate. The grown InP nanopillars were studied for their structural, chemical and optical properties. The new SAG process is not limited to the specific materials such as InP nanopillars and silicon substrate used in this demonstration; our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates.</div>
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<s5>14</s5>
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   |texte=   Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates
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Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates

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